Schedule 8 3:45 PM - 5:45 PM [Mo-P-08] 150 mm 4H Silicon carbide wafer geometry optimization, defect reduction by thermal treatment and quality of epilayer *Ching-Shan Lin1, Manhsuan Lin1, Chuck Hsu1, Roman Drachev2, Bob Berliner2, Bala Bathey2, SRaghavan Parthasarathy2 (1. GlobalWafers Co.,Ltd(Taiwan), 2. GT Advanced Technologies,(United States of America))
