[Mo-P] Poster Presentation

[Mo-P-08] 150 mm 4H Silicon carbide wafer geometry optimization, defect reduction by thermal treatment and quality of epilayer

*Ching-Shan Lin¹, Manhsuan Lin¹, Chuck Hsu¹, Roman Drachev², Bob Berliner², Bala Bathey², SRaghavan Parthasarathy² (1. GlobalWafers Co.,Ltd(Taiwan), 2. GT Advanced Technologies,(United States of America))