Mon. Sep 30, 2019 3:45 PM - 5:45 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
6
3:45 PM - 5:45 PM
[Mo-P-09] High etching rate photo-electrochemical CARE (catalyst referred etching) of SiC by a potential control of catalyst surface
*Ryosuke Ohnishi1, Daisetsu Toh1, Hideka Kida1, Satoshi Matsuyama1, Yasuhisa Sano1, Kazuto Yamauchi1,2(1. Department of Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan), 2. Res. Center of Ultra-Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan))