Resistivity measurement of P<sup>+</sup>-implanted 4H-SiC samples prepared at different implantation and annealing temperatures using terahertz time-domain spectroscopic ellipsometry

Kotaro Ishiji

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Poster Presentation

[Mo-P] Poster Presentation

Mon. Sep 30, 2019 3:45 PM - 5:45 PM Annex Hall 1 (Kyoto International Conference Center)

3:45 PM - 5:45 PM

[Mo-P-20] Resistivity measurement of P⁺-implanted 4H-SiC samples prepared at different implantation and annealing temperatures using terahertz time-domain spectroscopic ellipsometry

*Kotaro Ishiji¹, Seiji Kawado¹, Yasuharu Hirai¹, Shinji Nagamachi² (1. Kyushu synchrotron light research center(Japan), 2. Nagamachi Sci. Lab. co. ltd.(Japan))

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Presentation information

[Mo-P] Poster Presentation

[Mo-P-20] Resistivity measurement of P+-implanted 4H-SiC samples prepared at different implantation and annealing temperatures using terahertz time-domain spectroscopic ellipsometry

[Mo-P-20] Resistivity measurement of P⁺-implanted 4H-SiC samples prepared at different implantation and annealing temperatures using terahertz time-domain spectroscopic ellipsometry