Schedule 6 3:45 PM - 5:45 PM [Mo-P-30] Effect of Al ion implantation and activation annealing on work function values of 4H-SiC Epitaxial Layers *Hong-Ki Kim1, Seongjun kim1, Min-Jae Kang1, Jonas Buettner2, Minwho Lim2, Tobias Erlbacher2, Anton J. Bauer2, Sang-Mo Koo3, Nam-suk Lee1, Hoon-Kyu Shin1 (1. POSTECH(Korea), 2. Fraunhofer IISB(Germany), 3. Kwangwoon Univ.(Korea))
