[Mo-P] Poster Presentation

[Mo-P-30] Effect of Al ion implantation and activation annealing on work function values of 4H-SiC Epitaxial Layers

*Hong-Ki Kim¹, Seongjun kim¹, Min-Jae Kang¹, Jonas Buettner², Minwho Lim², Tobias Erlbacher², Anton J. Bauer², Sang-Mo Koo³, Nam-suk Lee¹, Hoon-Kyu Shin¹ (1. POSTECH(Korea), 2. Fraunhofer IISB(Germany), 3. Kwangwoon Univ.(Korea))