[Mo-P] Poster Presentation

[Mo-P-33] Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation

*Tomonori Okada¹, Jun Inoue¹, Fumitaka Nishiyama¹, Hiroshi Sezaki^1,2, Shin-Ichiro Kuroki¹ (1. RNBS, Hiroshima Univ.(Japan), 2. Phenitec Semiconductor Co .Ltd.(Japan))