Schedule 3 3:45 PM - 5:45 PM [Mo-P-37] Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests *Cuong Van Vuong1, Seiji Ishikawa2, Tomonori Maeda2, Hiroshi Sezaki 2, Shin-Ichiro Kuroki 1 (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Corp(Japan))
