[Mo-P] Poster Presentation

[Mo-P-37] Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests

*Cuong Van Vuong¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki ², Shin-Ichiro Kuroki ¹ (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Corp(Japan))