Schedule 5 3:45 PM - 5:45 PM [Mo-P-38] Dynamic Measurement Method to Extract High Voltage and High Current I-V Characteristics of SiC MOSFET with Reduced Self Heating *Yohei Nakamura1, Tatsuya Yanagi1, Hiroyuki Sakairi1, Naotaka Kuroda1, Ken Nakahara1 (1. ROHM Co., Ltd.(Japan))
