[Mo-P] Poster Presentation

[Mo-P-39] Increased Short-Circuit Withstand Time and Reduced DIBL by Constant-Gate-Charge Scaling in SiC Power MOSFETs

*James A Cooper¹, Dallas T. Morisette², Madankumar Sampath² (1. Sonrisa Research, Inc. and Purdue Univ.(United States of America), 2. Purdue Univ.(United States of America))