スケジュール 4 15:45 〜 17:45 [Mo-P-48] High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes *Yidan Tang1,2, Xinyu Liu1, Yun Bai1, Chengzhan Li3, Chengyue Yang 1 (1. Microelectronics of Chinese Academy of Sciences Inst(China), 2. Chinese Academy of Sciences Univ(China), 3. Zhuzhou CRRC Times Electric Co., Ltd(China))