[Mo-P] Poster Presentation

[Mo-P-49] Impact of proton irradiation on power 4H-SiC MOSFETs

*Aleksandr A Lebedev¹, Vitalii Kozlovski², Leonid Fursin³, Anatoly M Strel’chuk¹, Pavel A Ivanov¹, Mikhail E Levinshtein¹, Aleksandr V A. Zubov⁴ (1. Ioffe Institute,Polytekhnicheskaya 26, St. Petersburg 194021, Russia(Russia), 2. St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, St. Petersburg 195251, Russia(Russia), 3. United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852, USA(United States of America), 4. National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101, Russia(Russia))