[PL-1] Plenary Session I

[IP-04(Invited)] [Invited Poster Introduction]
Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))