Thu. Oct 3, 2019 8:45 AM - 10:15 AMRoom A (Kyoto International Conference Center)
Schedule
5
9:15 AM - 9:30 AM
[Th-1A-02] Aging and failure mechanisms of SiC Power MOSFETs under repetitive short-circuit pulses of different duration
*Alberto Castellazzi1, Alessandro Borghese3, Francois Boige2, Vanessa Chazal4(1. University of Nottingham(UK), 2. LAPLACE - University of Toulouse(France), 3. University of Naples "Federico II"(Italy), 4. THALES(France))