[Th-1A] Testing and Radiation

[Th-1A-02] Aging and failure mechanisms of SiC Power MOSFETs under repetitive short-circuit pulses of different duration

*Alberto Castellazzi¹, Alessandro Borghese³, Francois Boige², Vanessa Chazal⁴ (1. University of Nottingham(UK), 2. LAPLACE - University of Toulouse(France), 3. University of Naples "Federico II"(Italy), 4. THALES(France))