[Th-1A] Testing and Radiation

[Th-1A-03] Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche Stress

*Jiaxing Wei¹, Siyang Liu¹, Sheng Li¹, Lizhi Tang¹, Rongcheng Lou¹, Hao Fu¹, Hangbo Zhao¹, Weifeng Sun¹, Xiaobing Zhang², Song Bai³ (1. National ASIC System Eng. Res. Center, School of Electronics Sci. and Eng., Southeast Univ.(China), 2. School of Electronics Sci. and Eng., Southeast Univ.(China), 3. State Key Lab. of Wide-bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Device Inst.(China))