ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

Thu. Oct 3, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

8:45 AM - 9:15 AM

[Th-1B-01(Invited)] Statistical analysis of killer and non-killer defects in SiC and impacts to device performance

*Hrishikesh Das1, S Sunkari1, J Justice1, H Pham2, G Park2 (1. ON Semiconductor, South Portland(United States of America), 2. ON Semiconductor, Bucheon(Korea))