ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

Thu. Oct 3, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

9:30 AM - 9:45 AM

[Th-1B-03] Formation of double Shockley stacking faults in heavily nitrogen doped 4H-SiC crystal with reduction of residual stress around scratch damage

*Naohiro Sugiyama1,2, Takeshi Mitani2, Isaho Kamata3, Tomohisa Kato2, Hidekazu Tsuchida3, Hajime Okumura2 (1. DENSO Corp.(Japan), 2. Advanced Indus. Sci. and Tech.(Japan), 3. Central Res. Inst. of Electric Power Industry(Japan))