ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

2019年10月3日(木) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

09:30 〜 09:45

[Th-1B-03] Formation of double Shockley stacking faults in heavily nitrogen doped 4H-SiC crystal with reduction of residual stress around scratch damage

*Naohiro Sugiyama1,2, Takeshi Mitani2, Isaho Kamata3, Tomohisa Kato2, Hidekazu Tsuchida3, Hajime Okumura2 (1. DENSO Corp.(Japan), 2. Advanced Indus. Sci. and Tech.(Japan), 3. Central Res. Inst. of Electric Power Industry(Japan))