ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Th-2A] Device Processing

Thu. Oct 3, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

10:45 AM - 11:15 AM

[Th-2A-01(Invited)] Improved Al2O3 gate technology for high-power and high-frequency GaN transistors

*Tamotsu Hashizume1,2 (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ.(Japan), 2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan))