[Th-2A] Device Processing

[Th-2A-04] Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate

*Mitsuaki Kaneko^1,2, Alexander Tsibizov², Tsunenobu Kimoto¹, Ulrike Grossner² (1. Kyoto Univ.(Japan), 2. ETH Zurich(Switzerland))