[Th-2A] Device Processing

[Th-2A-05] Investigating the Influence of Al Ion Implantation and Post-Implantation Annealing on the Near-Surface Area of 4H-SiC

*Johanna Mueting¹, Viktor Bobal², Marc Georg Willinger¹, Steffen Reidt³, Lasse Vines², Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. University of Oslo(Norway), 3. IBM Research(Switzerland))