[Th-P] Poster Presentation

[Th-P-12] Defect Characterization in 100 mm commercial 4H-SiC Substrate and Homoepitaxial Wafer

*Long Yang^1,2, Lixia Zhao^1,2, Huiwang Wu^1,2, Yafei Liu³, Balaji Raghothamachar³, Michael Dudley³ (1. Hebei Key Lab. of New Semiconductor Materials(China), 2. Hebei Poshing Electronics Tech. Corp. Ltd.(China), 3. Stony Brook Univ.(United States of America))