[Th-P] Poster Presentation

[Th-P-19] Comparative results of low-temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons

Vitali V. Kozlovski¹, Oleg Korolkov², Alexander A. Lebedev³, Jana Toompuu², *Natalja Sleptsuk² (1. Peter the Great St. Petersburg Polytechnic University(Russia), 2. Tallinn University of Technology(Estonia), 3. Ioffe Institute(Russia))