Thu. Oct 3, 2019 1:45 PM - 3:45 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
3
1:45 PM - 3:45 PM
[Th-P-19] Comparative results of low-temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons
Vitali V. Kozlovski1, Oleg Korolkov2, Alexander A. Lebedev3, Jana Toompuu2, *Natalja Sleptsuk2(1. Peter the Great St. Petersburg Polytechnic University(Russia), 2. Tallinn University of Technology(Estonia), 3. Ioffe Institute(Russia))