[Th-P] Poster Presentation

[Th-P-28] Improvement of surface morphology and state density of 4H-SiC using reduced-graphene oxide (r-GO) as a capping layer

*Seongjun Kim¹, Minwho Lim², Hong-Ki Kim¹, Min-Je Sung¹, Min-Jae Kang¹, Hahye Choi¹, Nam-Suk Lee¹, Tobias Erlbacher², Anton Bauer², Hoon-Kyu Shin¹ (1. Pohang Univ. of Sci. and Tech.(Korea), 2. Fraunhofer Inst. for Integrated Systems and Device Tech. (IISB)(Germany))