ICSCRM2019

講演情報

Poster Presentation

Poster Presentation

[Th-P] Poster Presentation

2019年10月3日(木) 13:45 〜 15:45 Annex Hall 1 (Kyoto International Conference Center)

13:45 〜 15:45

[Th-P-33] Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment

*Takuji Hosoi1, Momoe Ohsako1, Takayoshi Shimura1, Heiji Watanabe1 (1. Osaka University(Japan))