Thu. Oct 3, 2019 1:45 PM - 3:45 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
2
1:45 PM - 3:45 PM
[Th-P-35] 1.2 kV SiC trench MOSFETs with double p-base junctions
*Ogyun Seok1, In Ho Kang1, Hyoung Woo Kim1, Jeong Hyun Moon1, Moonkyong Na1, Sangcheol Kim1, Nam Kyun Kim1, Young Jo Kim1, Hyun Jin Jung1, Wook Bahng1(1. Korea Electrotechnology Research Institute(Korea))