Schedule 6 1:45 PM - 3:45 PM [Th-P-49LN] Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method *Takeshi Okamoto1, Takahiro Kanda1, Yuichiro Tokuda1, Nobuyuki Ohya1, Kiyoshi Betsuyaku2, Norihiro Hoshino2, Isaho Kamata2, Hidekazu Tsuchida2 (1. DENSO CORP.(Japan), 2. CRIEPI(Japan))