Schedule 4 1:45 PM - 3:45 PM [Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution *Takashi Hirayama1, Keisuke Nagaya1, Akira Miyasaka2, Kazutoshi Kojima3, Tomohisa Kato3, Hajime Okumura3, Masashi Kato1 (1. Nagoya Inst.(Japan), 2. Showa Denko(Japan), 3. AIST(Japan))