Schedule 2 1:45 PM - 3:45 PM [Th-P-53LN] Surface treatment of 4H-SiC MOSFETs prior to Al2O3 deposition *Muhammad Idzdihar Idris1, A. B. Horsfall2 (1. Univ. Teknikal Malaysia Melaka(Malaysia), 2. Newcastle Univ.(UK))