スケジュール 2 13:45 〜 15:45 [Th-P-53LN] Surface treatment of 4H-SiC MOSFETs prior to Al2O3 deposition *Muhammad Idzdihar Idris1, A. B. Horsfall2 (1. Univ. Teknikal Malaysia Melaka(Malaysia), 2. Newcastle Univ.(UK))