High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs

Presentation information

Oral Presentation

Packaging and Applications

Tue. Oct 1, 2019 8:45 AM - 10:15 AM Room A (Kyoto International Conference Center)

10:00 AM - 10:15 AM

*Elena Mengotti¹, Enea Bianda¹, David Baumann¹, Jason Bettega¹, Joni Jormanainen² (1. ABB(Switzerland), 2. ABB Drives(Finland))