[Tu-1B] Extended Defects I

[Tu-1B-01(Invited)] Operando X-ray topography analysis of 4H-SiC MOSFETs for investigating stacking fault expansion

K. Konishi¹, R. Fujita¹, K. Kobayashi¹, A. Yoneyama¹, Y. Mori¹, *AKIO SHIMA¹ (1. Research & Development Group, Hitachi, Ltd.(Japan))