Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

Tuerxun Ailihumaer

Presentation information

Oral Presentation

Characterization and Defect Engineering

[Tu-1B] Extended Defects I

Tue. Oct 1, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

9:30 AM - 9:45 AM

[Tu-1B-03] Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gil Chung², Ian Manning², Edward Sanchez² (1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))

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