ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[Tu-1B] Extended Defects I

2019年10月1日(火) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

09:45 〜 10:00

[Tu-1B-04] Analysis of Prismatic Dislocations in 4H-SiC Crystals by Multiple-beam Diffraction Topography

*Isaho Kamata1, Norihiro Hoshino1, Yuichiro Tokuda2, Takahiro Kanda2, Naohiro Sugiyama2, Hironari Kuno2, Hidekazu Tsuchida1 (1. Central Res. Inst. of Electric Power Industry (CRIEPI)(Japan), 2. DENSO CORPORATION(Japan))