ICSCRM2019

講演情報

Oral Presentation

Characterization and Defect Engineering

[Tu-1B] Extended Defects I

2019年10月1日(火) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

10:00 〜 10:15

[Tu-1B-05] Lattice Plane Distortions Introduced by Epilayer Growth of SiC wafers

*Nadeemullah A Mahadik1, Robert E Stahlbush1, Stanislav Stoupin2, Hrishikesh Das3, Peter Bonanno1, Albert Macrander4 (1. Naval Research Laboratory(United States of America), 2. Cornell High Energy Synchrotron Source, Cornell Univ.(United States of America), 3. On Semiconductor(United States of America), 4. Argonne National Lab.(United States of America))