Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs compared with Linear, Square, and Hexagonal Topologies

Presentation information

Oral Presentation

Power and High-Frequency Devices

Tue. Oct 1, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

11:15 AM - 11:30 AM

*Kijeong Han¹, Ajit Kanale¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. North Carolina State Univ.(United States of America))