Experimental Study of Switching and Short-Circuit Performance of 1.2kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

Presentation information

Oral Presentation

Power and High-Frequency Devices

Tue. Oct 1, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

11:45 AM - 12:00 PM

*Aditi Agarwal¹, Ajit Kanale¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. NC State University(United States of America))