Experimental Study of Switching and Short-Circuit Performance of 1.2kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

講演情報

Oral Presentation

Power and High-Frequency Devices

2019年10月1日(火) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:45 〜 12:00

*Aditi Agarwal¹, Ajit Kanale¹, Kijeong Han¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. NC State University(United States of America))