Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFETs investigated by local deep level transient spectroscopy and device simulation

Presentation information

Oral Presentation

MOS Gate Stacks and Device Processing

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

3:00 PM - 3:15 PM

*Kohei Yamasue¹, Yuji Yamagishi¹, Yasuo Cho¹ (1. Tohoku Univ.(Japan))