Control of the Photoluminescence of the Silicon Vacancy in 4H Silicon Carbide by Electric Fields

Presentation information

Oral Presentation

Characterization and Defect Engineering

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Annex Hall 2 (Kyoto International Conference Center)

2:15 PM - 2:30 PM

Lena Bergmann¹, *Maximilian Ruehl¹, Heiko B. Weber¹, Michael Krieger¹ (1. Friedrich-Alexander Univ. Erlangen-Nuremberg(Germany))