スケジュール 1 16:15 〜 18:15 [IP-01(Invited)] SiC epitaxial reactor cleaning by ClF3 gas with the help of reaction heat Keisuke Kurashima1, Masaya Hayashi1, *Hitoshi Habuka1, Hideki Ito2, Shin-ichi Mitani2, Yoshinao Takahashi3 (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))