スケジュール 3 16:15 〜 18:15 [Tu-P-01] 3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress *Francesco La Via1, Marco Mauceri2, Cristiano Calabretta1, Massimo Zimbone1, Ruggero Anzalone3 (1. CNR-IMM(Italy), 2. LPE(Italy), 3. STMicroelectronics(Italy))