スケジュール 2 16:15 〜 18:15 [Tu-P-07] Formation of an AlN intermediate layer on off-axis Si(110) substrate and a SiC seed layer thereon for SiC heteroepitaxy on Si Yuki Nara1, Hiroki Kasai1, *Hideki Nakazawa1 (1. Hirosaki Univ.(Japan))