スケジュール 1 16:15 〜 18:15 [Tu-P-10] Etching rate profile of C-face 4H-SiC wafer depending on total gas flow rate of chlorine trifluoride and nitrogen Kenta Irikura1, Ryohei Kawasaki1, *Hitoshi Habuka1, Yoshinao Takahashi2, Tomohisa Kato3 (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan), 3. AIST(Japan))