Schedule 4 4:15 PM - 6:15 PM [Tu-P-19] Impact of threading dislocations detected by KOH etching on 4H-SiC 650 V MOSFET device failure after reliability test *Andrea Severino1, Ruggero Anzalone1, Nicolo' Piluso1, Cirino Rapisarda1, Alfio Russo1, Beatrice Carbone1, Santi Alessandrino1, Salvo Coffa1 (1. STMicroelectronics(Italy))