スケジュール 2 16:15 〜 18:15 [Tu-P-21] Damage characterization of GaN substrate with hot implant process *Junko Maekawa1, Hitoshi Kawanowa1, Masahiko Aoki1, Katsumi Takahiro2, Toshiyuki Isshiki2 (1. Ion Tech. Center Co.,Ltd(Japan), 2. Kyoto Inst. of Tech.(Japan))