[Tu-P] Poster Presentation

[Tu-P-25] Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs

*Xiang Zhou¹, Collin W. Hitchcock¹, Poon-man Tang¹, Ishwara Bhat¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))